Description
The 2EDL family contains devices, which control power devices like MOS-transistors or IGBTs with a maximum blocking voltage of +600 V in half bridge configurations..
Features
- Infineon thin-film-SOI-technology.
- Fully operational to +600 V.
- Integrated Ultra-fast, low RDS(ON) Bootstrap Diode.
- Floating channel designed for bootstrap operation.
- Output source/sink current capability +1.8 A/-2.5 A.
- Tolerant to negative transient voltage up to -100 V
(Pulse width is up 300 ns) given by SOI-technology.
- Interlock, Enable, Fault, and over current protection.
- 10 ns typ. , 60 ns max. propagation delay matching.
- dV/dt immune ±50 V.
