2EDL23N06PJ, 2EDL23I06PJ Datasheet - Infineon

2EDL23N06PJ 600V Half Bridge Gate Driver

The 2EDL family contains devices, which control power devices like MOS-transistors or IGBTs with a maximum blocking voltage of +600 V in half bridge configurations. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present .

2EDL23N06PJ Features

* Infineon thin-film-SOI-technology

* Fully operational to +600 V

* Integrated Ultra-fast, low RDS(ON) Bootstrap Diode

* Floating channel designed for bootstrap operation

* Output source/sink current capability +1.8 A/-2.5 A

* Tolerant to negative transient voltage up to -100

2EDL23I06PJ-Infineon.pdf