2EDL23N06PJ Datasheet | Infineon

Features - Infineon thin-film-SOI-technology - Fully operational to +600 V - Integrated Ultra-fast, low RDS(ON) Bootstrap Diode - Floating channel designed for bootstrap operation - Output source/sink current capability +1.8 A/-2.5 A - Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology - Interlock, Enable, Fault, and over current protection - 10 ns typ., 60 ns max. propagation delay matching - d V/dt immune ±50 V - Undervoltage lockout for both channels - 3.3 V, 5 V and 15 V input logic patible - Ro HS pliant Potential applications Product summary VOFFSET IO+/- (typ.) VOUT Delay Matching tf/tr (typ. CL=4.9 n F) = 620 V max. = 1.8 A/2.5 A = 10 V - 17.5 V = 60 ns max. = 37 ns/48 ns Package DSO-14 - Motor drives, general purpose inverters - Refrigeration pressors, home appliance - Half-bridge and full-bridge converters in offline AC-DC power supplies for tele and lighting Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Description The 2EDL family contains devices, which control power devices like MOS-transistors or IGBTs with a maximum blocking voltage of +600 V in half bridge configurations. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch up may occur at all temperature and voltage conditions. The two independent driver outputs are controlled at the low-side using two different CMOS resp. LSTTL patible signals, down up to 3.3 V logic. The device includes an under-voltage detection unit with hysteresis characteristic which are optimised either for IGBT or MOSFET. Those parts, which are designed for IGBT have asymmetric undervoltage lockout levels, which support strongly the integrated ultra-fast bootstrap diode. Additionally, the offline gate clamping function provides an inherent protection of the transistors for parasitic...