2EDL23N06PJ Description
The 2EDL family contains devices, which control power devices like MOS-transistors or IGBTs with a maximum blocking voltage of +600 V in half bridge configurations. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device.
2EDL23N06PJ Key Features
- Infineon thin-film-SOI-technology
- Fully operational to +600 V
- Integrated Ultra-fast, low RDS(ON) Bootstrap Diode
- Floating channel designed for bootstrap operation
- Output source/sink current capability +1.8 A/-2.5 A
- Tolerant to negative transient voltage up to -100 V
- Interlock, Enable, Fault, and over current protection
- 10 ns typ., 60 ns max. propagation delay matching
- dV/dt immune ±50 V
- Undervoltage lockout for both channels