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2EDL05I06PJ - 600V Half Bridge Gate Driver

This page provides the datasheet information for the 2EDL05I06PJ, a member of the 2EDL05I06PF 600V Half Bridge Gate Driver family.

Datasheet Summary

Description

The 2ED05 is a 600-V half-bridge gate driver family.

Its Infineon thin-film-SOI technology provides excellent ruggedness and noise immunity.

The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V.

Features

  • Infineon thin-film-SOI-technology.
  • Fully operational to +600 V.
  • Floating channel designed for bootstrap operation.
  • Output source/sink current capability +0.36 A/-0.7 A.
  • Integrated Ultra-fast, low RDS(ON) Bootstrap Diode.
  • Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology.
  • 10 ns typ. , 60 ns max. propagation delay matching.
  • dV/dt immune ±50 V.
  • Gate drive supply rang.

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Datasheet preview – 2EDL05I06PJ

Datasheet Details

Part number 2EDL05I06PJ
Manufacturer Infineon
File Size 901.18 KB
Description 600V Half Bridge Gate Driver
Datasheet download datasheet 2EDL05I06PJ Datasheet
Additional preview pages of the 2EDL05I06PJ datasheet.

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Full PDF Text Transcription

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2EDL05 family 2EDL05x06xx family 600 V Half Bridge Gate Driver with Integrated Bootstrap Diode (BSD) Features • Infineon thin-film-SOI-technology • Fully operational to +600 V • Floating channel designed for bootstrap operation • Output source/sink current capability +0.36 A/-0.7 A • Integrated Ultra-fast, low RDS(ON) Bootstrap Diode • Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology • 10 ns typ., 60 ns max. propagation delay matching • dV/dt immune ±50 V • Gate drive supply range from 10 V to 20 V • Undervoltage lockout for both channels • 3.3 V, 5 V and 15 V input logic compatible • RoHS compliant Product summary VOFFSET IO+/- (typ.) VOUT Delay Matching tf/tr (typ.) = 620 V max. = 0.36 A/0.7 A = 10 V - 17.5 V = 60 ns max.
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