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2EDL05N06PJ - 600V Half Bridge Gate Driver

Download the 2EDL05N06PJ datasheet PDF. This datasheet also covers the 2EDL05I06PF variant, as both devices belong to the same 600v half bridge gate driver family and are provided as variant models within a single manufacturer datasheet.

Description

The 2ED05 is a 600-V half-bridge gate driver family.

Its Infineon thin-film-SOI technology provides excellent ruggedness and noise immunity.

The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V.

Features

  • Infineon thin-film-SOI-technology.
  • Fully operational to +600 V.
  • Floating channel designed for bootstrap operation.
  • Output source/sink current capability +0.36 A/-0.7 A.
  • Integrated Ultra-fast, low RDS(ON) Bootstrap Diode.
  • Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology.
  • 10 ns typ. , 60 ns max. propagation delay matching.
  • dV/dt immune ±50 V.
  • Gate drive supply rang.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2EDL05I06PF-Infineon.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Infineon

Part Number Description
2EDL05N06PF 600V Half Bridge Gate Driver
2EDL05I06BF 600V Half Bridge Gate Driver
2EDL05I06PF 600V Half Bridge Gate Driver
2EDL05I06PJ 600V Half Bridge Gate Driver
2EDL23I06PJ 600V Half Bridge Gate Driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2EDL05 family 2EDL05x06xx family 600 V Half Bridge Gate Driver with Integrated Bootstrap Diode (BSD) Features • Infineon thin-film-SOI-technology • Fully operational to +600 V • Floating channel designed for bootstrap operation • Output source/sink current capability +0.36 A/-0.7 A • Integrated Ultra-fast, low RDS(ON) Bootstrap Diode • Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology • 10 ns typ., 60 ns max. propagation delay matching • dV/dt immune ±50 V • Gate drive supply range from 10 V to 20 V • Undervoltage lockout for both channels • 3.3 V, 5 V and 15 V input logic compatible • RoHS compliant Product summary VOFFSET IO+/- (typ.) VOUT Delay Matching tf/tr (typ.) = 620 V max. = 0.36 A/0.7 A = 10 V - 17.5 V = 60 ns max.
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