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2ED2304S06F - 650V Half Bridge Gate Driver

General Description

The 2ED2304S06F is a 650-V half-bridge gate driver.

Its Infineon thin-film-SOI technology provides excellent ruggedness and noise immunity.

The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V.

Key Features

  • Infineon thin-film-SOI-technology.
  • Fully operational to +650 V.
  • Floating channel designed for bootstrap operation.
  • Output source/sink current capability +0.36 A/-0.7 A.
  • Integrated Ultra-fast, low RDS(ON) Bootstrap Diode.
  • Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology.
  • 10 ns typ. , 60 ns max. propagation delay matching.
  • dV/dt immune ±50 V.
  • Gate drive supply rang.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2ED2304S06F 2ED2304S06F 650 V Half Bridge Gate Driver with Integrated Bootstrap Diode (BSD) Features • Infineon thin-film-SOI-technology • Fully operational to +650 V • Floating channel designed for bootstrap operation • Output source/sink current capability +0.36 A/-0.7 A • Integrated Ultra-fast, low RDS(ON) Bootstrap Diode • Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology • 10 ns typ., 60 ns max. propagation delay matching • dV/dt immune ±50 V • Gate drive supply range from 10 V to 20 V • Undervoltage lockout for both channels • Integrated dead-time with interlocking function • 3.3 V, 5 V and 15 V input logic compatible • RoHS compliant Product summary VOFFSET IO+/- (typ.) VOUT Delay Matching Internal deadtime ton/off (typ.