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2ED2388S06F - 650V half bridge gate driver

Description

The 2ED2388S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Features

  • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
  • Negative VS transient immunity of -100 V.
  • Floating channel designed for bootstrap operation.
  • Operating voltages (VS node) upto + 650 V.
  • Maximum bootstrap voltage (VB node) of + 675 V.
  • Integrated ultra-fast, low resistance bootstrap diode.
  • 100 ns dead-time with integrated shoot-through prevention logic.
  • Logic operational up to.
  • 11 V on VS Pin.

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Full PDF Text Transcription

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2ED2181 (4) S06F 2ED2388S06F 650 V half bridge gate driver with integrated bootstrap diode Features • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology • Negative VS transient immunity of -100 V • Floating channel designed for bootstrap operation • Operating voltages (VS node) upto + 650 V • Maximum bootstrap voltage (VB node) of + 675 V • Integrated ultra-fast, low resistance bootstrap diode • 100 ns dead-time with integrated shoot-through prevention logic • Logic operational up to –11 V on VS Pin • Negative voltage tolerance on inputs of –5 V • Independent under voltage lockout for both channels • Schmitt trigger inputs with hysteresis • 3.
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