2ED21091S06F driver equivalent, 650v half bridge gate driver.
* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
* Negative VS transient immunity of 100 V
* Floating channel designed for bootstrap operatio.
Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommenda.
The 2ED21091S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maint.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 778.59KB)