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2ED21084S06J, 2ED2108S06F - 650V half bridge gate driver

2ED21084S06J Description

2ED2108 (4) S06F (J) 2ED2108 (4) S06F (J) 650 V half bridge gate driver with integrated bootstrap diode .
The 2ED2108 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

2ED21084S06J Features

* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
* Negative VS transient immunity of 100 V
* Floating channel designed for bootstrap operation
* Operating voltages (VS node) upto + 650 V
* Maximum bootstrap voltage (VB node) of + 675 V
* Integrated ultra-fast

2ED21084S06J Applications

* Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendations are as below:
* Motor drives, general purpose inverters having TRENCHSTOP™ IGBT6 or 600 V EasyPACK™ modules or its equivalent power stages
* Refrigeration compressors,

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: 2ED21084S06J, 2ED2108S06F. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
2ED21084S06J, 2ED2108S06F
Manufacturer
Infineon ↗
File Size
1.32 MB
Datasheet
2ED2108S06F-Infineon.pdf
Description
650V half bridge gate driver
Note
This datasheet PDF includes multiple part numbers: 2ED21084S06J, 2ED2108S06F.
Please refer to the document for exact specifications by model.

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650V half bridge gate driver Infineon
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