* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
* Negative VS transient immunity of 100 V
* Floating channel designed for bootstrap operatio.

Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendat.

The 2ED2108 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability .

2ED21084S06J

2ED21091S06F

2ED21094S06J

2ED2109S06F

2ED21814S06J

2ED2181S06F

2ED21834S06J

2ED2183S06F

2ED2304S06F

2ED2410-EM

2ED28073J06F

2ED020I06-FI

2ED020I12-F

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