MJD44E3 transistor equivalent, silicon npn power transistor.
*Designed for general-purpose amplifier and low-speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMB.
*High DC Current Gain
: hFE = 1000(Min)@ IC= 5A
*Low Collector-Emitter Saturation Voltage
: VCE(sat) = 1.5V(Max)@ IC= 5A
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
*Designed for g.
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