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MJD44H11A - 8A NPN high power bipolar transistor

Description

NPN high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package.

2.

Features

  • High thermal power dissipation capability.
  • High energy efficiency due to less heat generation.
  • Electrically similar to popular MJD44H series.
  • Low collector emitter saturation voltage.
  • Fast switching speeds.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number MJD44H11A
Manufacturer Nexperia
File Size 230.34 KB
Description 8A NPN high power bipolar transistor
Datasheet download datasheet MJD44H11A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJD44H11A 80 V, 8 A NPN high power bipolar transistor 28 May 2019 Preliminary data sheet 1. General description NPN high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD44H series • Low collector emitter saturation voltage • Fast switching speeds • AEC-Q101 qualified 3. Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4. Quick reference data Table 1.