MJ11016 transistor equivalent, silicon npn darlington power transistor.
*Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATIN.
*Collector-Emitter Breakdown Voltage
: V(BR)CEO= 120V(Min.)
*High DC Current Gain-
: hFE= 1000(Min.)@IC= 20A
*Low Collector Saturation Voltage-
: VCE (sat)= 3.0V(Max.)@ IC= 20A
*Complement to the PNP MJ11015
*Minimum Lot-to-Lot va.
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