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MJ10012T - Silicon NPN Power Transistor

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Datasheet Details

Part number MJ10012T
Manufacturer Inchange Semiconductor
File Size 216.74 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet MJ10012T-InchangeSemiconductor.pdf

MJ10012T Product details

Description

Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) High Power Dissipation DARLINGTON 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V I

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