Datasheet4U Logo Datasheet4U.com

MJ1800 - Silicon NPN Power Transistor

📥 Download Datasheet

Preview of MJ1800 PDF
datasheet Preview Page 2

Datasheet Details

Part number MJ1800
Manufacturer Inchange Semiconductor
File Size 133.72 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet MJ1800-InchangeSemiconductor.pdf

MJ1800 Product details

Description

High Collector-Emitter Voltage Good Linearity of hFE APPLICATIONS Designed for use in vertical deflection amplifier circuits in television receivers.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 250 V VCBO Collector- Base Voltage 500 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERM

📁 MJ1800 Similar Datasheet

  • MJ1000 - Medium-Power Complementary Silicon Transistors (Motorola Inc)
  • MJ10000 - 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS (Motorola Inc)
  • MJ10001 - NPN Silicon Transistor (Wing Shing Computer Components)
  • MJ10002 - NPN Transistor (INCHANGE)
  • MJ10004 - Darlington Power Transistor (Multicomp)
  • MJ10005 - 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS (Motorola Inc)
  • MJ10005P - NPN Transistor (INCHANGE)
  • MJ10006 - NPN Silicon Transistor (Wing Shing Computer Components)
Other Datasheets by Inchange Semiconductor
  • MJ10003 - Silicon NPN Darlington Power Transistor
  • MJ10012T - Silicon NPN Power Transistor
  • MJ11013 - POWER TRANSISTOR
  • MJ11016 - Silicon NPN Darlington Power Transistor
  • MJ16002A - Silicon NPN Power Transistor
  • MJ16110 - Silicon NPN Power Transistor
Published: |