logo

IXFH6N120P Datasheet, Inchange Semiconductor

IXFH6N120P transistor equivalent, n-channel mosfet transistor.

IXFH6N120P Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 345.46KB)

IXFH6N120P Datasheet

Features and benefits


*Drain Current : ID= 6.0A@ TC=25℃
*Drain Source Voltage : VDSS= 1200V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 2.75Ω(Max) @ VGS= 10V
*100% aval.

Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .

Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6.0.

Image gallery

IXFH6N120P Page 1 IXFH6N120P Page 2

TAGS

IXFH6N120P
N-Channel
MOSFET
Transistor
Inchange Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts