IXFH60N20F mosfets equivalent, hiperrftm power mosfets.
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1.13/10 Nm/lb.in. 6 4 g g
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RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance .
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V ±100.
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