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IXFH60N20 - HiPerFET Power MOSFETs

Download the IXFH60N20 datasheet PDF. This datasheet also covers the IXFT60N20 variant, as both devices belong to the same hiperfet power mosfets family and are provided as variant models within a single manufacturer datasheet.

Features

  • l l l l International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 4.0 ± 100 TJ = 25°C TJ = 125°C 25 1 33 V V nA µA mA mΩ Advantages l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Easy to mount Space savings Hi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFT60N20_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFH60N20F HiPerRFTM Power MOSFETs
IXFH60N25Q Power MOSFET
IXFH60N50P3 Polar3 HiperFET Power MOSFET
IXFH66N20Q Power MOSFET
IXFH67N10 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt IXFH 60N20 IXFT 60N20 VDSS = 200 V = 60 A ID25 RDS(on) = 33 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 200 200 ±20 ±30 60 240 60 50 2.5 5 300 -55 to +150 150 -55 to +150 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-268 ( IXFT) Case Style G S (TAB) G = Gate D = Drain S = Source TAB = Drain 1.6 mm (0.