Datasheet4U Logo Datasheet4U.com

IXFH69N30P - PolarHT HiPerFET Power MOSFET

Features

  • z z 1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-247 TO-264 300 1.13/10 Nm/lb. in. 6 10 g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH60N20 HiPerFET Power MOSFETs IXYS Corporation
IXFH60N20F HiPerRFTM Power MOSFETs IXYS Corporation
IXFH60N25Q Power MOSFET IXYS Corporation
IXFH60N50P3 Polar3 HiperFET Power MOSFET IXYS Corporation
IXFH60N60X N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFH60N60X Power MOSFET
IXFH60N65X2 Power MOSFET
IXFH6N100 Power MOSFETs
IXFH6N90 Power MOSFETs
IXFH100N25P PolarHT HiPerFET Power MOSFET

Full PDF Text Transcription

Click to expand full text
PolarHT HiPerFET Power MOSFET TM IXFH69N30P IXFK69N30P N-Channel Enhancement Mode Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 300 V = 69 A = 49 mΩ ≤ 200 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 69 200 69 50 1.5 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 (IXFH) G D (TAB) D S TO-264 (IXFK) G D D (TAB) S D = Drain TAB = Drain G = Gate S = Source Features z z 1.6 mm (0.062 in.
Published: |