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IXFH60N50P3 - Polar3 HiperFET Power MOSFET

Download the IXFH60N50P3 datasheet PDF. This datasheet also covers the IXFT60N50P3 variant, as both devices belong to the same polar3 hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z z z G D S D (Tab) TO-247 (IXFH) G D S D (Tab) D = Drain Tab = Drain G = Gate S = Source 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247 300 260 1.13 / 10 4.0 5.5 6.0 Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±30V, VDS = 0.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFT60N50P3_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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Advance Technical Information Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT60N50P3 IXFQ60N50P3 IXFH60N50P3 VDSS ID25 RDS(on) = 500V = 60A ≤ 100mΩ TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 60 150 30 1 35 1040 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in.
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