Datasheet4U Logo Datasheet4U.com

IXFH60N65X2 - N-Channel MOSFET

Features

  • Drain Source Voltage- : VDSS= 650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) ≤ 52mΩ@VGS= 10V.
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH60N65X2 Power MOSFET IXYS
IXFH60N60X Power MOSFET IXYS
IXFH60N20 HiPerFET Power MOSFETs IXYS Corporation
IXFH60N20F HiPerRFTM Power MOSFETs IXYS Corporation
IXFH60N25Q Power MOSFET IXYS Corporation

Other Datasheets by Inchange Semiconductor

Part Number Description
IXFH60N60X N-Channel MOSFET
IXFH102N15T N-Channel MOSFET
IXFH110N15T2 N-Channel MOSFET
IXFH12N65X2 N-Channel MOSFET
IXFH130N15X3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤ 52mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Easy to Mount ·Space Savings ·High Power Density ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Plused 120 A PD Total Dissipation @TC=25℃ 780 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.
Published: |