BUL128DB transistor equivalent, silicon npn power transistor.
*Designed for electronic ballasts for fluorescent lighting.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VA.
*Collector
–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
*Low Collector Saturation Voltage
: VCE(sat) = 0.7V(Max) @ IC= 0.5A
*Very High Switching Speed
APPLICATIONS
*Designed for electronic ballasts for fluoresc.
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