BUL128 - NPN Transistor

Inchange Semiconductor

Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A Very High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for us

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BUL128 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BUL128
Manufacturer	Inchange Semiconductor
File Size	208.26 KB
Description	NPN Transistor
Datasheet	BUL128 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL128 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies.