BUL128D - HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

TGS

General Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

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BUL128D high voltage fast-switchingnpn power transistor by TGS - Datasheet Preview

Datasheet Details

Part number	BUL128D
Manufacturer	TGS
File Size	59.88 KB
Description	HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR
Datasheet	BUL128D Datasheet

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Full PDF Text Transcription (Reference)

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TIGER ELECTRONIC CO.,LTD Product specification HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR BUL128D ■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ APPLICATIONS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ FLYBACK AND FORWARD SINGLE DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.