BDY13-6 transistor equivalent, silicon npn power transistor.
*Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UN.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1V(Max)@ IC = 3A
*High Switching Speed
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
.
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