3DD102C transistor equivalent, silicon npn power transistor.
*Designed for power amplifier , DC Transform T-Shirt
*
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Vo.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
*DC Current Gain-
: hFE= 20(Min.)@IC= 2A
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 2.5A
*Minimum Lot-to-Lot variations for robust device
performance .
Image gallery
TAGS
Download (Size : 209.37KB)