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3DD102 Datasheet, Inchange Semiconductor

3DD102 transistor equivalent, silicon npn power transistor.

3DD102 Avg. rating / M : 1.0 rating-12

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3DD102 Datasheet

Application


*Designed for power amplifier , DC Transform T-Shirt
* SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vol.

Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.)
*DC Current Gain- : hFE= 20(Min.)@IC= 2A
*Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS
*Designed for power amplifier , DC Transform T-.

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3DD102 Page 1 3DD102 Page 2

TAGS

3DD102
Silicon
NPN
Power
Transistor
3DD10
3DD100
3DD100A
Inchange Semiconductor

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