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3DD102B Datasheet, Inchange Semiconductor

3DD102B transistor equivalent, silicon npn power transistor.

3DD102B Avg. rating / M : 1.0 rating-11

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3DD102B Datasheet

Application


*Designed for power amplifier,DC-DC converter and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=.

Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.)
*DC Current Gain- : hFE= 20(Min.)@IC= 2A
*Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS
*Designed for power amplifier,DC-DC converter a.

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3DD102B Page 1 3DD102B Page 2

TAGS

3DD102B
Silicon
NPN
Power
Transistor
Inchange Semiconductor

Manufacturer


Inchange Semiconductor

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