2SD2165 transistor equivalent, silicon npn power transistor.
*Designed for use low frequency amplifilier and low switching speed applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
.
*High DC Current Gain-
: hFE= 800(MIN)@ (VCE= 5V, IC= 1A)
*Low Collector-Emitter Saturation Voltage
: VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS.
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