2SD2162 transistor equivalent, npn transistor.
*Designed for low-frequency power amplifiers and low-
speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃.
*High hFE due to Darlington connection
: HFE ≥ 2,000 @(VCE = 2.0 V, IC = 3.0 A)
*Low Collector Saturation Voltage-
: VCE(sat) ≤1.5V @ (IC=3A, IB= 3mA)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
AP.
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