2SD2161 transistor equivalent, silicon npn power transistor.
*Designed for low-frequency power amplifiers and low-
speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
*High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 2V, IC= 2A)
*Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 2A, IB= 2mA)
*Minimum Lot-to-Lot variations for robu.
Image gallery
TAGS
Download (Size : 200.47KB)