Datasheet4U Logo Datasheet4U.com

2SC5252 - Silicon NPN Power Transistor

Description

High speed switching High breakdown voltage VCBO = 1500 V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC5252 NPN TRANSISTOR Hitachi Semiconductor
2SC5250 Silicon NPN Transistor Hitachi Semiconductor
2SC5250 SILICON POWER TRANSISTOR SavantIC
2SC5250 NPN Transistor INCHANGE
2SC5251 Silicon NPN Transistor Hitachi Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC5218 Silicon NPN Transistor
2SC5227 Silicon NPN Transistor
2SC5241 Silicon NPN Power Transistors
2SC5265 Silicon NPN Power Transistor
2SC5296 Silicon NPN Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High speed switching High breakdown voltage VCBO = 1500 V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5252 isc website： www.iscsemi.
Published: |