2SC5250
DESCRIPTION
- Silicon NPN diffused planar transistor
- High speed switching
- Built-in damper diode type
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for display horizontal deflection output
Switching regulator and general purpose
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃ isc Website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
INCHANGE...
