2SC5227
DESCRIPTION
- High Gain Bandwidth Product f T = 7 GHz TYP.
- High Gain, Low Noise Figure
︱S21e︱2 = 12 d B TYP., NF = 1.0 d B TYP @ f = 1 GHz
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for VHF~UHF wideband low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
70 m A
℃
Tstg
Storage Temperature Range
-55~150
℃ isc website：.iscsemi.cn
1 isc & iscsemi isregistered trademark isc Silicon NPN RF Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS...
