2SB954 transistor equivalent, silicon pnp power transistor.
*Designed for power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collect.
*Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max)@IC= -1A
*Good Linearity of hFE
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for power amplifications.
ABSOLUTE M.
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