2SB950A transistor equivalent, silicon pnp power transistor.
*Designed for power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*High DC Current Gain-
: hFE= 2000(Min.)@IC= -3A
*High Speed Switching
*Complement to Type 2SD1276A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for power amplifier an.
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