2SA1250 transistor equivalent, power transistor.
*Designed for general-purpose power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VA.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min)
*Low Collector Saturatioin Voltage-
: VCE(sat)= -1.0V(Max.)@ IC= -5A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Desig.
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TAGS
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