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2SA1250 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) Low Collector Saturatioin Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power switching applicatio

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isc Silicon PNP Power Transistor 2SA1250 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 30 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.