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IXST15N120BD1 - Improved SCSOA Capability

Key Features

  • High Blocking Voltage.
  • Epitaxial Silicon drift region - fast switching - small tail current - low switching losses.
  • MOS gate turn-on for drive simplicity.
  • Molding epoxies meet UL 94 V-0 flammability classification.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preliminary data www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W Non repetitive TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 40 @ 0.8 VCES 10 150 -55 ... +150 150 -55 ...