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IXSR35N120BD1 - IGBT

Key Features

  • z z z z VCES VCGR.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT with Diode ISOPLUS 247TM Short Circuit SOA Capability IXSR 35N120BD1 (Electrically Isolated Backside) VCES IC25 VCE(sat) tfi(typ) = 1200 V = 70 A = 3.6 V = 180 ns Symbol www.DataSheet4U.com Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH VGE= 15 V, VCE = 720 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C IGBT Diode Maximum Ratings 1200 1200 ± 20 ± 30 70 30 140 ICM = 90 @ 0.8 VCES 10 250 150 -55 ... +150 150 -55 ...