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IXSN80N60BD1 - High Current IGBT

Key Features

  • International standard package z Aluminium-nitride isolation - high power dissipation z Isolation voltage 3000 V~ z UL registered E 153432 z Low VCE(sat) - for minimum on-state conduction losses z Fast Recovery Epitaxial Diode - short trr and IRM z Low collector-to-case capacitance (< 60 pF) - reduced RFI z Low package inductance (< 10 nH) - easy to drive and to protect z B V CES V GE(th) I CES I GES VCE(sat) IC IC = 500 µA, VGE = 0 V = 8 mA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE(sat) tfi C G E = = = = 600 V 160 A 2.5 V 180 ns Preliminary Data Sheet E www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (Silicon chip capability) Lead current limit (RMS) TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Maximum Ratings 600 600 ± 20 ± 30 160 100 80 300 ICM = 160 @ 0.8 VCES 10 420 2500 3000 -55 ... +150 150 -55 ...