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IXSN52N60AU1 - IGBT

Key Features

  • International standard package miniBLOC.
  • Aluminium-nitride isolation - high power dissipation.
  • Isolation voltage 3000 V~.
  • Low VCE(sat) - for minimum on-state conduction losses.
  • Fast Recovery Epitaxial Diode - short trr and IRM.
  • Low collector-to-case capacitance (< 50 pF) - reducesd RFI.
  • Low package inductance (< 10 nH) - easy to drive and to protect.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT with Diode Combi Pack Short Circuit SOA Capability IXSN 52N60AU1 VCES IC25 VCE(sat) 3 2 = 600 V = 80 A = 3V 4 www.DataSheet4U.com 1 Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC VISOL TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive TC = 25°C 50/60 Hz IISOL £ 1 mA t = 1 min t=1s Maximum Ratings 600 600 ±20 ±30 80 40 160 ICM = 80 @ 0.8 VCES 10 250 2500 3000 -55 ... +150 150 -55 ...