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IXGH32N50BU1S - HiPerFAST IGBT

Download the IXGH32N50BU1S datasheet PDF. This datasheet also covers the IXGH32N50BU1 variant, as both devices belong to the same hiperfast igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg G E C (TAB) TO-247 AD C (TAB) G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Md Weight Mounting torque, TO-247 AD l l l l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High frequency IGBT and antiparallel FRED in one package High current handling capability Newest generation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH32N50BU1_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGH32N50BU1 HiPerFAST IGBT
IXGH32N50B HiPerFAST IGBT
IXGH32N50BS HiPerFAST IGBT
IXGH32N170 High Voltage IGBT
IXGH32N60A HiPerFAST IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Data Sheet HiPerFASTTM IGBT with Diode Combi Pack IXGH32N50BU1 IXGH32N50BU1S VCES IC25 VCE(sat) tfi TO-247 SMD (32N50BU1S) = = = = 500 V 60 A 2.0 V 80 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25 °C Maximum Ratings 500 500 ±20 ±30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 TO-247 SMD TO-247 AD 4 6 V V V V A A A A W °C °C °C °C Nm/lb.in.