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IXGH32N50BS - HiPerFAST IGBT

Download the IXGH32N50BS datasheet PDF. This datasheet also covers the IXGH32N50B variant, as both devices belong to the same hiperfast igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • l G E C (TAB) TO-247 AD C (TAB) G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb. in. TO-247 AD TO-247 SMD 6 4 g g l l l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High current handling capability Newest generation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH32N50B_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGH32N50B HiPerFAST IGBT
IXGH32N50BU1 HiPerFAST IGBT
IXGH32N50BU1S HiPerFAST IGBT
IXGH32N170 High Voltage IGBT
IXGH32N60A HiPerFAST IGBT

Full PDF Text Transcription

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Preliminary Data Sheet HiPerFASTTM IGBT IXGH32N50B VCES IXGH32N50BS I C25 VCE(sat) tfi TO-247 SMD (32N50BS) = = = = 500 V 60 A 2.0 V 80 ns www.DataSheet4U.com Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125° C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 500 500 ±20 ±30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C Features l G E C (TAB) TO-247 AD C (TAB) G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) 1.
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