Datasheet4U Logo Datasheet4U.com

IXGH32N50B - HiPerFAST IGBT

Features

  • l G E C (TAB) TO-247 AD C (TAB) G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb. in. TO-247 AD TO-247 SMD 6 4 g g l l l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High current handling capability Newest generation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXGH32N120A3 Ultra-Low Vsat PT IGBT IXYS
IXGH32N170A High Voltage IGBT IXYS
IXGH32N90B2 High Speed IGBTs IXYS
IXGH32N90B2D1 IGBT IXYS
IXGH30N60B2D1 IGBT IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGH32N50BS HiPerFAST IGBT
IXGH32N50BU1 HiPerFAST IGBT
IXGH32N50BU1S HiPerFAST IGBT
IXGH32N170 High Voltage IGBT
IXGH32N60A HiPerFAST IGBT

Full PDF Text Transcription

Click to expand full text
Preliminary Data Sheet HiPerFASTTM IGBT IXGH32N50B VCES IXGH32N50BS I C25 VCE(sat) tfi TO-247 SMD (32N50BS) = = = = 500 V 60 A 2.0 V 80 ns www.DataSheet4U.com Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125° C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 500 500 ±20 ±30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C Features l G E C (TAB) TO-247 AD C (TAB) G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) 1.
Published: |