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IXFT120N15P - Polar MOSFETs

Download the IXFT120N15P datasheet PDF. This datasheet also covers the IXFH120N15P variant, as both devices belong to the same polar mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175°C Characteristic Values Min. Typ. Max. 300 3.0 5.0 ±100 25 1000 17 V V nA µA µA mΩ z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z Easy to mount Space savings High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH120N15P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFT12N100F Power MOSFET
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IXFT14N80P PolarHV HiPerFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Technical Information PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH 120N15P IXFT 120N15P VDSS = 150 V ID25 = 120 A RDS(on) ≤ 17 mΩ ≤ 200 ns trr www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 Test Conditions TJ = 25°C to 175°C TJ = 25°C to 10°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 175°C, RG = 4 Ω TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 120 75 300 60 50 1.5 10 600 -55 ... +175 175 -55 ...