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IXFN100N50P - Power MOSFET

Key Features

  • International standard package.
  • Encapsulating epoxy meets www. DataSheet4U. net 1.6 mm (0.062 in. ) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤1 mA t=1s Mounting torque Terminal connection torque SOT-227B 300 2500 3000 UL 94 V-0, flammability classification isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect.
  • miniBLOC with Aluminium nitride l l 1.5 / 13 Nm/lb. in. 1.5 / 13 Nm/lb. in. 30.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN 100N50P VDSS ID25 RDS(on) trr = = ≤ ≤ 500 V 90 A 49 mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω TC = 25° C Maximum Ratings 500 500 ±30 ±40 90 75 250 100 100 5 20 1040 -55 ... +150 150 -55 ...