z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z .

z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.0 V 4.

IXFL44N100P

IXFL44N60

IXFL100N50P

IXFL30N120P

IXFL32N120P

IXFL34N100

IXFL36N110P

IXFL38N100P

IXFL38N100Q2

IXFL39N90

IXFL60N60

IXFL60N80P

IXFL70N60Q2

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