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IXTX90P20P - Power MOSFET

Key Features

  • International Standard Packages.
  • Rugged PolarPTM Process.
  • Avalanche Rated.
  • Fast Intrinsic Diode.
  • Low Package Inductance Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTK90P20P IXTX90P20P VDSS = ID25 =  RDS(on) - 200V - 90A 44m TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings - 200 V - 200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C - 90 - 270 - 90 3.5 10 890 -55 ... +150 150 -55 ... +150 A A A J V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (PLUS247) Mounting Torque (TO-264) 20..120 / 4.5..27 1.13 / 10 N/lb Nm/lb.