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IXYS

IXSQ10N60B2D1 Datasheet Preview

IXSQ10N60B2D1 Datasheet

High Speed IGBT with Diode

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High Speed IGBT
with Diode
IXSH 10N60B2D1
IXSQ 10N60B2D1
Short Circuit SOA Capability
www.DataSheet4U.com
VCES = 600 V
IC25 = 20 A
VCE(sat) = 2.5 V
Preliminary Data Sheet
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
IF(110)
ICM
SSOA
(RBSOA)
tSC
(SCSOA)
PC
TJ
TJM
Tstg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE= 15 V, TJ = 125°C, RG = 82
Clamped inductive load, VGE = 20 V
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 150 Ω, non repetitive
TC = 25°C
Mounting torque
TO-247
TO-3P
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
D1
Maximum Ratings
600
600
± 20
± 30
20
10
11
30
ICM = 20
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
A
µs
100 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.3/10 Nm/lb. in
5g
5g
300 °C
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VGE = 0 V
IC = 750 µA, VCE = VGE
VVGCEE
=
=
0VVCES
VCE = 0 V, VGE = ± 20 V
IC = 10A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600 V
4.0 7.0 V
75 µA
200 µA
± 100 nA
2.5 V
TO-247 (IXSH)
GCE
TO-3P (IXSQ)
(TAB)
G
C
E
G = Gate
E = Emitter
(TAB)
C = Collector
TAB = Collector
Features
• International standard package
• Guaranteed Short Circuit SOA
capability
Low
- for
VloCwE(soatn) -state
conduction
losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
© 2004 IXYS All rights reserved
DS99236(10/04)




IXYS

IXSQ10N60B2D1 Datasheet Preview

IXSQ10N60B2D1 Datasheet

High Speed IGBT with Diode

No Preview Available !

Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 10A; VCE = 10 V, Note 1
VCE = 25 V, VGE = 0 V
f = 1 MHz
IC = 10A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = 10A, VGE = 15 V
VCE = 0.8 VCES, RG = 30
Switching
(Clamp) >
times may
0.8 • VCES,
increase
higher TJ
for
or
VCE
increased RG
Inductive load, TJ = 125°C
IC = 10 A, VGE = 15 V
VSwCEit=ch0in.8gVtiCmESe, sRmG =ay3i0ncrease for
oVrCEin(cCrleaamspe)d
> 0.8
RG
VCES,
higher
TJ
2.0 3.6
S
400 pF
50 pF
11
17
6
7.5
30
30
180
165
430
30
30
0.32
260
270
790
pF
nC
nC
nC
ns
ns
ns
ns
750 µJ
ns
ns
mJ
ns
ns
µJ
1.25 K/W
0.25
K/W
IXSH 10N60B2D1
IXSQwww1.D0aNta6Sh0eeBt42U.Dco1m
TO-247 Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF IF = 10A, VGE = 0 V
TJ =150°C
1.66 V
2.66 V
IRM
IF = 12A, VGE = 0 V, -diF/dt = 100 A/µs
TJ = 100°C 1.5
trr VR = 100 V
TJ = 100°C 90
A
ns
trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
RthJC
Note 1: Pulse test, t 300 µs, duty cycle d 2 %
25 ns
2.5 K/W
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585


Part Number IXSQ10N60B2D1
Description High Speed IGBT with Diode
Maker IXYS
Total Page 6 Pages
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