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IXSH24N60B - High Speed IGBT

Key Features

  • z z Mounting torque 1.13/10 Nm/lb. in. 6 300 g °C z Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 3.5 24N60B 24N60BD1 24N60B 24N60BD1 6.5 25 200 1 2 ±100 2.5 V V µA µA mA mA nA V International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on.

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Other Datasheets by IXYS (now Littelfuse)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Speed IGBT Short Circuit SOA Capability IXSH IXST IXSH IXST 24N60B 24N60B 24N60BD1 24N60BD1 VCES IC25 VCE(sat) tfi typ = 600 V = 48 A = 2.5 V = 170 ns (D1) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 33 Ω Clamped inductive load, VCC= 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 Ω, non repetitive TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 48 24 96 ICM = 48 @ 0.8 VCES 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A A µs W °C °C °C TO-247 AD (IXSH) (TAB) G C E TO-268 (D3) ( IXST) G E G = Gate E = Emitter (TAB) TAB = Collector Features z z Mounting torque 1.