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IXGK35N120B - IGBT

Features

  • International standard packages JEDEC TO-264 and PLUS247TM.
  • Low switching losses, low V(sat).
  • MOS Gate turn-on - drive simplicity Symbol Test Conditions BVCES VGE(th) I CES IGES VCE(sat) IC = 1 mA, VGE = 0 V IC = 750 µA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V © 2002 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 V 5V T= J 25°C TJ = 125°C 250 µA 5 mA ±100 nA TJ = 125°.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 V = 1200 V CES IC25 = 70 A VCE(sat) = 3.3 V =tfi(typ) 160 ns (D1) Symbol Test Conditions V CES VCGR V GES VGEM IC25 I C90 ICM SSOA (RBSOA) T J = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C T C = 90°C TC = 25°C, 1 ms V GE = 15 V, T VJ = 125°C, R G = 5 Ω Clamped inductive load P C T C = 25°C TJ TJM Tstg Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 1200 1200 V V ±20 V ±30 V 70 A 35 A 140 A I = 90 CM @ 0.8 VCES 350 A W -55 ... +150 150 -55 ...
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