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HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Preliminary Data
Symbol
V DSS
V DGR
VGS VGSM ID25 I
DM
IAR EAR EAS dv/dt
PD TJ TJM T
stg
T J
VISOL
Md
Weight
Test Conditions
T J
= 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MΩ
Continuous
Transient
TC = 25°C
T C
=
25°C,
pulse
width
limited
by
T JM
TC = 25°C
TC = 25°C
TC = 25°C
I
S
≤
I,
DM
di/dt
≤
100
A/µs,
V DD
≤
V, DSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.
IXFN90N30 Datasheet
